The present invention represents an improved approach.The present invention utilizes a novel geometry for the mesa structure that makes it possible to etch a shallower moat than in conventional structures but still to achieve a low series resistance. A low series resistance is advantageous to achieve a low voltage drop during forward conduction, a high clamping voltage or surge current capacity, and fast turn-on and reverse recovery speeds.To achieve a low series resistance, it is generally important to work with relatively thin semiconductive wafers. A first diffused layer is in the mesa portion and follows essentially the contour of the top surface of the mesa portion and has edges that terminate at the side walls of the mesa portion.Viewed from another perspective, the present invention is a semiconductive device which comprises a semiconductive chip having a front and a back surface, and a bulk portion at the back surface and a mesa portion at the front surface, the front and back surfaces each including a central depression, and a diffused layer at the front surface forming a p-n junction that follows essentially the contour of the top surface and whose edges terminate on the side walls of the mesa portion.Viewed from still another perspective, the present invention is a semiconductive device which comprises a semiconductive chip having a central bulk portion and mesa portions on the front and back surfaces of said central bulk portion with central depressions in the front and back surfaces, first and second diffused layers on the surfaces of said mesa portions, and separate electrode connections to said first and second diffused layersViewed from still another perspective, the present invention is a method for making a semiconductive device using the following steps. As is known, the resistivity of this bulk portion 11 largely determines the breakdown voltage of the diode, the higher the resistivity, the higher the breakdown voltage. A Generally speaking, for usual current levels in forward bias, this capacitance far exceeds the depletion-layer capacitance. This tends to result in a thicknesses for the rim region 19 that makes for breakage and lowered yields in manufacture.Referring now to FIG. 2, there is shown a chip 20 in accordance with one embodiment of the present invention. It typically is of relatively high resistivity material, either n-type or p-type conductivity. The figure shows two of the many possible structures used for p–n semiconductor diodes, both adapted to increase the voltage the devices can withstand in reverse bias. Advantageously, the wafer 50 is cut so that a top (front) surface 50A corresponds to a <100> plane that will permit controlled anisotropic etching of the wafer 50, as is desirable, as will be discussed later. 1 and 4 can be gained from the below Table 1. 6 illustrates a portion of a starting wafer 50 in which a single chip 20 of FIG. 2, 3, and 5 compared to the prior art embodiments of FIGS. For example, while the invention has been described with reference to silicon as the semiconductor, the principles are applicable to other semiconductors. To force current through the diode a In forward bias, the positive terminal of the battery is connected to the A forward bias separates the two bulk half-occupancy levels by the amount of the applied voltage, which lowers the separation of the The gradient driving the diffusion is then the difference between the large excess minority carrier densities at the barrier and the low densities in the bulk, and that gradient drives diffusion of minority carriers from the interface into the bulk. Layers 13A and 13B are then formed on opposite sides of the bulk portion 11. Nos. 5 shows a cross-sectional view of a device with a mesa structure that has central depressions in both its top and bottom surfaces and two p-n junctions in accordance with another embodiment of the present invention; andFIGS.

2, conductive layers 16A and 16B are provided on the top and bottom diffused layers 13 and 15 (corresponding to layer 53 and 59 of FIG. Semiconductor structures for electronic use, such as for example a silicon-glass-silicon pressure sensor (Fig. Mesa diodes have been used as power rectifiers in which case the junctions have a relatively large area or as zener diodes, either unidirectional or bidirectional, or as transient voltage suppressor devices, in Which case the junctions are typically of relatively smaller area.The mesa technology is popular because it has a number of advantages. Additionally, mesa devices are easy to passivate.For most of its uses, it is important that the mesa device exhibit a low series resistance when in a low resistance state.


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